99.9% High Purity Alumina Ceramic Distributor Plate for PECVD, LPCVD, and MOCVD

99.9% High Purity Alumina Ceramic Distributor Plate for PECVD, LPCVD, and MOCVD

Product Description

The primary function of this High-purity Al₂O₃ Ceramic Gas Distribution Plate is to distribute process gases evenly and stably onto the wafer surface, thereby ensuring uniform thin-film deposition thickness, etching precision, and process repeatability. Its performance directly determines the uniformity of thin films, etching accuracy, and process yields during wafer fabrication. Manufactured from high-purity alumina (Al₂O₃) ceramic material (purity ≥99.9%) using precision forming, high-temperature sintering, and ultra-precision micro-hole machining technologies, the product offers significant advantages—including high chemical stability, excellent corrosion resistance, high electrical insulation, and low particle generation—making it an ideal replacement for traditional metal gas distribution plates.

Key Material Properties

99.9% high-purity alumina ceramic (also known as 3N-grade alumina) is one of the preferred materials for semiconductor equipment components, offering the following outstanding properties:

Product Structure and Functional Principles

1. Core Functions

The core function of the showerhead is to transform concentrated incoming process gases—via internal precision channels and arrays of micro-holes—into a low-turbulence, highly uniform laminar flow that is evenly distributed across the wafer surface. This achieves the following:

（1）Thin-film deposition uniformity: Ensures film thickness variation across the wafer surface is <±3%.

（2）Etching uniformity: Prevents localized over-etching or under-etching.

（3）Uniform plasma distribution: Acts as an electrode in PECVD/etching processes to generate a uniform electric field.

（4）Coordinated temperature control: Works in conjunction with the wafer susceptor to maintain stable process temperatures.

2.Typical structural composition

Key Technical Parameters

Product Core Competitive Advantages

1.Ultra-high purity, zero metal contamination

   Purity ≥99.9%; impurity levels (e.g., Na, Si) <100 ppm

   No metal ion leaching, preventing metal contamination of wafers

   Meets stringent material purity requirements for advanced process nodes (≤7 nm)

2.Exceptional Corrosion Resistance

   Highly resistant to strongly corrosive plasma gases, such as fluorine-based (F₂, CF₄, SF₆) and chlorine-based (Cl₂) gases

   Dense microstructure blocks the permeation of corrosive gases, preventing internal erosion

   Maintains surface integrity for extended periods in plasma etching environments and generates minimal particles

3.Precision Micro-hole Machining Technology

   Utilizes a hybrid process combining laser drilling and precision grinding to achieve high-precision micro-hole machining.

   Maintains a hole diameter consistency of ±0.01 mm, ensuring uniform gas flow distribution.

   Capable of machining ultra-deep micro-holes with an aspect ratio of 50:1, meeting the requirements of complex airflow path designs.

4.Excellent thermal stability and insulation properties

   Coefficient of thermal expansion matches that of silicon wafers, resulting in minimal deformation during temperature fluctuations

   Volume resistivity >10¹⁴ Ω·cm; maintains stable electrical insulation in high-frequency plasma environments

   Stable dielectric constant; suitable for RF power transmission at frequencies above 1 GHz

5.Exceptionally long service life and low maintenance costs

   Vickers hardness of 18–20 GPa; wear resistance far superior to traditional materials like aluminum alloys

   Service life in corrosive environments is 3–5 times that of metal flow plates

   Reduces the frequency of maintenance-related downtime and improves Overall Equipment Effectiveness (OEE)

6.High-Purity Assurance

   Surface polishable to a mirror finish (Ra < 0.01 μm) with minimal particle shedding

   Compliant with Class 1 cleanroom standards

   Fully dense, pore-free structure prevents gas entrapment and cross-contamination

Applications

1. Chemical Vapor Deposition (CVD)

    In thin-film deposition equipment such as PECVD, LPCVD, and MOCVD, the gas distribution plate uniformly disperses precursor gases onto the wafer surface, enabling the high-quality deposition of SiO₂, Si₃N₄, polysilicon, and metal films (e.g., TiN, W).

2.Atomic Layer Deposition (ALD)

    The ALD process places extremely high demands on gas uniformity; high-purity alumina gas distribution plates maintain structural stability at high temperatures exceeding 600°C, ensuring precise control of film thickness at the atomic layer level.

3.Plasma Etching

    In dry etching equipment, the gas distribution plate—which also serves as an RF electrode—uniformly introduces etching gases (such as CF₄, Cl₂, and SF₆) into the plasma chamber while withstanding high-energy ion bombardment. High-purity alumina exhibits plasma corrosion resistance that is significantly superior to that of metallic materials.

4.Physical Vapor Deposition (PVD)

    In sputtering deposition equipment, a gas distribution plate is used to evenly distribute sputtering gases (such as Ar and N₂) and maintain a stable sputtering plasma environment.

5.Advanced Packaging and Display Panel Manufacturing

    In wafer-level packaging (WLP), fan-out packaging, and OLED evaporation equipment, high-purity alumina gas distribution plates are used for the precise distribution of process gases, ensuring packaging yields and uniform light emission in display panels.

Customization Capabilities

We offer comprehensive custom design and manufacturing services, tailored to specific equipment models and process requirements:

1. dimensional customization: compatible with 6-inch, 8-inch, and 12-inch wafers, as well as special specifications.
2. micro-hole design: CFD-optimized design for hole diameter, pitch, and array layout.
3. gas channel structure: single, dual, or multi-channel gas distribution configurations.
4. surface treatment: mirror polishing and specialized coatings (e.g., corrosion-resistant SiC or Y₂O₃).
5. precision specifications: flatness and roughness parameters customized to process requirements.
6. material upgrades: options include ultra-high purity (99.99% / 4N) alumina or high-performance materials such as aluminum nitride (AlN).

All products are manufactured, cleaned, inspected, and packaged in a Class 10 (ISO 4) cleanroom environment to ensure delivery free from particle contamination. Each batch is accompanied by comprehensive reports covering elemental analysis, dimensional inspection, and helium leak testing.

Our workshop

Why choose us?

1.Customized R&D, rather than standard product adaptation

2.Deep control of materials science：Material Selection Based on Needs，Microstructure Optimization，Batch Consistency

3.Precision machining capability：Flatness can reach 0.001mm, parallelism 0.002mm, and roughness Ra 0.1μm.

FAQ

Q1: What products does your company offer?

We specialize in high-performance ceramics such as alumina and silicon nitride, providing insulators, structural components, wear-resistant parts, and customized solutions.

Q2: Can you customize non-standard parts?

Yes. We support processing based on provided drawings and collaborative technical development, offering a full-process service from design to mass production.

Q3: What about accuracy and delivery time?

Standard tolerance ±0.05mm, precision grade ±0.01mm; samples 7-15 days, bulk orders 20-30 days.

Q4: Main application areas?

Power, electronics, machinery, chemical, and aerospace industries.

Q5: Quality assurance measures?

Full-process quality inspection, providing material reports and performance test data, supporting third-party certification and testing.

Q6: Do you provide technical support?

We provide professional support such as material selection consultation, design optimization, and failure analysis.