99.9% High Temperature Resistant Silicon Carbide Rod for High-end Technology and Heavy Industry

High Temperature Resistant SiC Ceramic Rod

Product Description

High Temperature Resistant SiC Rod is rod-shaped ceramic products made from high-purity silicon carbide (SiC) powder as the main raw material through precise molding and high-temperature sintering processes. As a high-performance advanced ceramic material, its core characteristics include a raw material purity typically exceeding 99.5%, excellent mechanical strength, high-temperature resistance, and chemical stability. Due to its superior comprehensive performance, silicon carbide ceramic rods have become an ideal choice for high-temperature, highly corrosive, and highly abrasive environments.

Manufacturing Process

The manufacturing process of SiC Rod involves several precision process steps:

1. Raw Materials and Preparation

The manufacturing process begins with the preparation of high-purity silicon carbide powder. The powder is thoroughly mixed with binders and additives, and a uniform product structure is ensured through careful control of particle size, shape, and composition. Material purity is crucial; even minute impurities can lead to cracks or weak points, so we rigorously test material quality at each stage.

2.2. Molding Methods

Depending on application requirements, various molding techniques can be employed:

（1）Isostatic Pressing: Applying pressure uniformly in all directions to manufacture high-density products; the preferred process for aerospace and medical applications.

（2）Slip Casting: Pouring a liquid ceramic mixture into a mold; suitable for creating complex shapes, but requires precise control to remove excess moisture.

（3）Hot Pressing: Molding through simultaneous heating and pressure; particularly suitable for silicon carbide materials requiring high mechanical strength.

3. Sintering Process

Sintering is a key step in the manufacturing process including:

(1)Pressureless Sintering: high shape freedom with lower production costs, it can almost completely dense products. This technology is highly complex, but it broke the technological monopoly of international companies.

(2)Reaction sintering: Sintering temperature between 1450 and 1700℃, green body shrinkage is less than 3%, which is beneficial for dimensional control, but leaves residual free silicon, affecting alkali resistance and high-temperature strength.

(3)Recrystallization sintering: sintered at temperatures up to 2500℃, silicon carbide content can reach 100%, forming a shrinkage-free self-bonding structure.

(4)Hot isostatic pressing (HIP): utilizing heat and pressure to act on the material from all directions, removing internal impurities and improving uniformity.

Performance Characteristics

1. Mechanical Properties

(1)Ultra-high hardness: Mohs hardness approximately 9.2-9.6, second only to diamond, effectively resisting wear and scratches.

(2)High strength: Bending strength reaches 400-600 MPa, compressive strength exceeds 2000 MPa.

(3)High elastic modulus: Approximately 400-450 GPa, minimal deformation under stress.

2. Thermal Properties

(1)Excellent high-temperature resistance: Maintains excellent mechanical properties at temperatures up to 1600°C; standard products operate at approximately 1400°C, with special treatments increasing this to 1600-1650°C.

(2)High thermal conductivity: Approximately 120-200 W/m·K, enabling rapid heat conduction and preventing localized overheating.

(3)Low coefficient of thermal expansion: Approximately 4.0 × 10⁻⁶/°C, providing high dimensional stability during temperature changes.

(4)Excellent thermal shock resistance: Withstands rapid temperature changes (e.g., rapid cooling from room temperature to 1000°C).

3. Chemical Properties

(1)Strong Corrosion Resistance: Exhibits extremely strong corrosion resistance to most acid, alkali, and salt solutions (except hydrofluoric acid and strong alkalis).

(2)Good Oxidation Resistance: A dense SiO₂ oxide film forms on the surface in high-temperature oxidizing atmospheres, preventing further internal oxidation.

4. Electrical Properties

Semiconductor Characteristics: As a wide bandgap semiconductor material, the bandgap is approximately 3.2 eV.

Variable Resistivity: Resistivity is high at room temperature, decreasing with increasing temperature, reaching a minimum at 600-700°C, and then increasing with further temperature.

Application

Customized Process

 

Comprehend application product information from customers ⇒ Engineers create drawings ⇒ Customers confirms drawings ⇒ After customer confirmation, a quotation is prepared ⇒ Confirm quotation and making sample ⇒ Customers confirm sample ⇒ Deposit payment is made ⇒ Mass production begins ⇒ Shipping and receiving tracking ⇒ Order finish

FAQ

Q1: What products does your company offer?

We specialize in high-performance ceramics such as alumina and silicon nitride, providing insulators, structural components, wear-resistant parts, and customized solutions.

Q2: Can you customize non-standard parts?

Yes. We support processing based on provided drawings and collaborative technical development, offering a full-process service from design to mass production.

Q3: What about accuracy and delivery time?

Standard tolerance ±0.05mm, precision grade ±0.01mm; samples 7-15 days, bulk orders 20-30 days.

Q4: Main application areas?

Power, electronics, machinery, chemical, and aerospace industries.

Q5: Quality assurance measures?

Full-process quality inspection, providing material reports and performance test data, supporting third-party certification and testing.

Q6: Do you provide technical support?

We provide professional support such as material selection consultation, design optimization, and failure analysis.

Why choose us?

1.Customized R&D, rather than standard product adaptation

2.Deep control of materials science：Material Selection Based on Needs，Microstructure Optimization，Batch Consistency

3.Precision machining capability：Flatness can reach 0.001mm, parallelism 0.002mm, and roughness Ra 0.1μm.

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