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Al2O3 ZrO2 Ceramic Arm Wafer Robot Arm for Semiconductor

Al2O3 ZrO2 Ceramic Arm Wafer Robot Arm for Semiconductor

Alumina and zirconia Wafer Robot Arm is the core skeleton of high-end automated equipment, enabling high-speed, precise, and clean operation. Through the inherent superior properties of the material—lightweight, strong, stable, and clean—it solves the extreme requirements of industrial robots in cutting-edge fields such as semiconductors and electronics for speed, precision, and environmental compatibility, serving as the "precision joint" of modern intelligent manufacturing.

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Al2O3 ZrO2 Wafer Robot Arm for Semiconductor

Product Positioning

High-performance Ceramic Wafer Robot Arm designed for precision transmission of 300mm/450mm wafers and wafer carriers/trays. Made of high-purity alumina (Al₂O₃) material of over 99.5%, it is suitable for wafer pick-and-place and positioning transmission in EFEM (Equipment Front-End Module), Vacuum Transfer Chamber, and high-temperature process equipment.

 

Core Technological Advantages

       1.Ultimate Cleanliness and Zero Metal Contamination Control

          (1)Material Purity: 99.5%-99.8% high-purity alumina is used, with metal impurity content <50ppm, ensuring no precipitation of metal ions such as Fe, Cu, and Na.

          (2)Surface Characteristics: Mirror polished to Ra≤0.1μm, with no porous structure, eliminating particle shedding.

          (3)Vacuum Compatibility: Vacuum bakeout treatment ensures a total mass loss (TML) <0.1%, meeting Class 1 cleanroom and high vacuum environment (<10⁻⁶ Pa) requirements.

       2.Electrostatic Discharge (ESD) Control – Wafer-Level Protection

          (1)Electrostatic Dissipation Design: Optional integral sintered electrostatic dissipative ceramic (uncoated), with surface resistivity precisely controlled at 10⁶–10⁹ Ω/sq.

          (2)Electrostatic Pressure Control: Surface electrostatic potential <50V after friction testing, effectively preventing electrostatic discharge damage (ESD) to nanoscale circuits. Damage)

          (3)No coating peeling risk: One-piece molded antistatic structure avoids particle contamination caused by peeling of traditional conductive coatings during use.

        3.Micron-level precision transmission accuracy

           (1)Geometric accuracy: Flatness ≤0.005mm, parallelism ≤0.003mm, ensuring repeatability of wafer positioning during photolithography and alignment processes.

           (2)Thermal stability: Coefficient of thermal expansion (CTE) ~7×10⁻⁶/K, excellent thermal matching with silicon wafers (2.6×10⁻⁶/K), maintaining dimensional stability within the 100-300°C process temperature range.

           (3)Lightweight and high rigidity: Density only 3.8g/cm³, 35% lighter than aluminum alloy, elastic modulus ~300GPa, achieving zero-jitter transmission under high acceleration (>3g) of robotic arms.

       4.Multifunctional vacuum adsorption system

          (1)Long-lasting Vacuum Holding: The precision-designed vacuum groove structure can maintain pressures of -85kPa to -80kPa for over 60 seconds and -80kPa to -25kPa for over 35 seconds during a vacuum self-holding test, ensuring wafer safety in the event of a sudden gas interruption.

          (2)Low Contact Damage: The vacuum adsorption groove, combined with a Bernoulli suspension design, results in contact stress <0.1MPa, suitable for the safe handling of thin wafers (<100μm) and warped wafers.

 

Product lines and customization options

Product Type Technical features Applicable Scenarios
Vacuum Suction Type Porous ceramic/vacuum tank adsorption, supporting 4-12 inch wafers EFEM wafer loading, Loadlock transfer, CMP equipment loading and unloading
Bernoulli Type Utilizing the principle of airflow suspension, the gap between the wafer and the arm is 0.1-0.3mm. Sensitive film wafers, back-side no-contact processes, ultra-thin wafers (<50μm)
Edge Grip Type Mechanically clamps the wafer edge, achieving zero contact between the front and back sides. Double-sided lithography and measurement equipment
Tray-Integrated Type Integrated Wafer Tray carrier, supporting batch transfer of multiple wafers. Batch Process Equipment, Annealing Process
High-Temp Grade It can withstand instantaneous temperatures above 600°C and is used in hot transport. CVD, PVD, and RTP (Rapid Thermal Processing) equipment

 

Key Application Scenarios

1.EFEM and Wafer Loading SystemsTransfer

    (1)300mm/450mm wafers between FOUP (Front-Opening Wafer Container) and process equipment.

    (2)Matches thermal expansion with silicon wafers, avoiding positioning drift caused by temperature cycling.

2.High-Temperature Process Chamber Transfer:

    (1)CVD/PVD Equipment: Withstands high-temperature process environments (>300°C), with no thermal deformation or outgassing.

    (2)Diffusion Furnace: Performs wafer loading and unloading in high-temperature zones above 1000°C, replacing metal arms to avoid heat conduction contamination.

3.Cleaning and Wet Bench Processes

    (1)Resistant to strong acids (HF, HCl) and strong alkalis (KOH, NH₄OH) corrosion, suitable for drying transfer after wafer cleaning and etching (Marangoni Dryer).

4. Advanced Packaging and Testing

    (1)Thinned Wafer Handling: Prevents wafer breakage using Bernoulli's principle.

    (2)ESD Sensitive Devices Devices Treatment: Dissipative Ceramic Protection to Prevent Device Damage

 

Technical Specifications

Performance indicators Specifications
Material High-purity alumina (Al₂O₃ ≥99.5%), with optional antistatic doped type.
Applicable wafer size 4 inches (100mm) to 12 inches (300mm), with 450mm custom sizes available.
Flatness ≤0.005mm (critical adsorption surface)
Surface roughness Ra≤0.1μm (mirror grade), Ra≤0.02μm super mirror grade is optional.
Surface resistivity Insulating type: >10¹⁴ Ω·cm; Static dissipative type: 10⁶–10⁹ Ω/sq
Vacuum retention capability Hold time >60 seconds at -85 kPa (standard test)
Temperature range Long-term operating temperature: -50°C to +350°C; Short-term peak temperature: +600°C
Flexural strength ≥350 MPa
Metal precipitation <1ppb (deionized water immersion test)
Cleanroom Class Compliant with ISO Class 1, and validated by IPA steam cleaning and ultrasonic cleaning.

 

Quality and Certification Standards

Material Certification: Provides material composition analysis reports (ICP-MS), compliant with SEMI standards.

Cleanliness Verification: Complies with SEMI F57 (High-purity fluid systems) and SEMI E78 (Electrostatic control) specifications.

Size Standards: Follows SEMI M1 (Wafer Dimensions) and SEMI E1.9 (Mechanical Interfaces) standards.

Quality Management System: ISO 9001 certified, supports semiconductor industry PPAP (Production Part Approval Process).

 

Customized Services

We offer end-to-end customization from material selection, fluid dynamics simulation, precision machining to cleanroom cleaning:(1)Vacuum Loop Design: Optimize pore size and channel layout based on the customer's vacuum source pressure to ensure uniform adsorption.(2)ESD Protection Customization: Precisely adjust surface resistivity (10⁴–10¹¹ Ω range) to match specific process electrostatic safety requirements.(3)Lightweight Structure: Reduce weight by 20-30% while maintaining rigidity through topology optimization and cavity structure design.(4)Marking and Traceability: Support laser marking or mechanical engraving to meet the traceability requirements of semiconductor components.

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